product summary v ds 60 v r ds(on) 5 w i d 0.2 a feature n-channel enhancement mode logic level d v /d t rated sot-23 gate pin1 drain pin 3 source pin 2 marking ssn ssn type package ordering code tape and reel information sn7002n sot-23 q67042-s4185 e6327: 3000 pcs/reel sn7002n sot-23 q67042-s4192 e6433: 10000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.2 0.16 a pulsed drain current t a =25c i d puls 0.8 reverse diode d v /d t i s =0.2a, v ds =48v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 3 sn7002n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimal footprint r thja - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 60 - - v gate threshold voltage, v gs = v ds i d =26a v gs(th) 0.8 1.4 1.8 zero gate voltage drain current v ds =60v, v gs =0, t j =25c v ds =60v, v gs =0, t j =150c i dss - - - - 0.1 5 a gate-source leakage current v gs =20v, v ds =0 i gss - - 10 na drain-source on-state resistance v gs =4.5v, i d =0.17a r ds(on) - 3.9 7.5 w drain-source on-state resistance v gs =10v, i d =0.5a r ds(on) - 2.5 5 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 3 sn7002n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =0.16a 0.09 0.17 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 34 45 pf output capacitance c oss - 7.2 9.6 reverse transfer capacitance c rss - 2.8 4.2 turn-on delay time t d(on) v dd =30v, v gs =10v, i d =0.5a, r g =6 w - 2.4 3.6 ns rise time t r - 3.2 4.8 turn-off delay time t d(off) - 5.3 8 fall time t f - 3.6 5.4 gate charge characteristics gate to source charge q gs v dd =48v, i d =0.5a - 0.14 0.21 nc gate to drain charge q gd - 0.42 0.63 gate charge total q g v dd =48v, i d =0.5a, v gs =0 to 10v - 1 1.5 gate plateau voltage v (plateau) v dd =48v, i d = 0.5 a - 4.5 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.2 a inv. diode direct current, pulsed i sm - - 0.8 inverse diode forward voltage v sd v gs =0, i f = i s - 0.83 1.2 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 14.2 21.3 ns reverse recovery charge q rr - 5.9 8.8 nc 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 3 of 3 sn7002n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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